Semiconductor device and method for manufacturing the same

ABSTRACT

A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.

This is a Divisional application of Ser. No. 08/280,461, filed Jul. 26,1994.

FIELD OF THE INVENTION

The present invention relates to a semiconductor device such as a thinfilm transistor (TFT) or a thin film diode (TFD), or a thin filmintegrated circuit (IC) to which TFT or TFD is applied, and inparticular, a thin film integrated circuit (IC) for an active-matrixaddressed (active matrix) liquid crystal display device, having aninsulated gate structure comprising a semiconductor film provided on aninsulating substrate such as a glass substrate, or on an insulatingcoating formed on any type of substrate. The present invention alsorelates to a process for fabricating the same.

DESCRIPTION OF THE PRIOR ART

Semiconductor devices comprising TFTs on an insulating substrate (suchas a glass substrate) developed heretofore include an activematrix-addressed liquid crystal display device using the TFTs fordriving the matrices, an image sensor, and a three-dimensional IC.

The TFTs utilized in those devices generally employ a thin film siliconsemiconductor. Thin film semiconductors can be roughly classified intotwo; one is a type comprising amorphous silicon semiconductor (a-Si),and the other is a type comprising crystalline silicon semiconductors.Amorphous silicon semiconductors are most prevailing, because they canbe fabricated relatively easily by a vapor phase process at a lowtemperature, and because they can be readily obtained by massproduction. The physical properties thereof, such as electricconductivity, however, are still inferior to those of a crystallinesilicon semiconductor. Thus, to implement devices operating at an evenhigher speed, it has been keenly demanded to establish a process forfabricating TFTs comprising crystalline silicon semiconductors. Knowncrystalline semiconductors include polycrystalline silicon,microcrystalline silicon, amorphous silicon partly comprisingcrystalline components, and semiamorphous silicon which exhibits anintermediate state between crystalline silicon and amorphous silicon.

In case of fabricating an insulated gate structure using the siliconfilms enumerated above, an insulating film having excellent boundarycharacteristics must be fabricated by any means on the surface of thesilicon film. For instance, a gate insulated film can be formed bythermal oxidation if a quartz substrate or any substrate resistant tohigh temperature is used. However, a quartz substrate is expensive, andis not suitable for large area substrates due to its too high a meltingpoint. Accordingly, the use of other inexpensive glass materials (suchas a Corning No.7059 glass) for the substrate is preferred because ofits low melting point and its applicability to mass production. Thoselower cost glass substrate materials, however, do not resist to a hightemperature process for fabricating a thermal oxidation film. Thus, theinsulating film is formed on those inexpensive glass substrates at lowertemperatures by means of a physical vapor deposition (PVD) such assputtering, or a chemical vapor deposition (CVD) such as plasma assistedCVD or photo CVD.

The insulating films formed by PVD or CVD process, however, sufferpinholes and inferior interface characteristics. Thus, the TFTs formedfrom these films yield problematic low field mobility and lowsub-threshold characteristics (the S value), or a large leak current ingate electrode, a severe degradation, and a low production yield. Inparticular, these characteristics of a gate insulating film has not beenfound a problem in a TFT using amorphous silicon having low mobility,however, in a TFT using a silicon film having high mobility, thecharacteristics of the gate insulating film are found more importantthan those of the silicon film itself.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a means for solving theaforementioned problems, and to provide an oxide film on thesemiconductor layer formed on an insulating substrate. In particular,the present invention provides a process for fabricating a gateinsulating film as well as a structure of a gate insulating film using acrystalline silicon film for a TFT improved in device characteristics,reliability, and production yield, so long as the conditions do notaffect the substrate materials.

Another object of the present invention is to provide, in addition tothe active layer of a semiconductor device, a highly crystallinesemiconductor layer.

The present invention is characterized in that it comprises forming athin silicon oxide film on the surface of an island-like crystallinesilicon film by irradiating an intense light to the semiconductormaterial (optically annealing) at a wavelength not influencing thesubstrate material under an oxidizing atmosphere such as of oxygen,nitrogen oxide, and ozone. Otherwise, the thin silicon oxide film(referred to hereinafter as "thermal oxide film", inclusive of thesilicon oxide film obtained by irradiating an intense light) is formedby thermally annealing the island-like crystalline silicon film at atemperature not influencing the substrate material. In the presentinvention, the step of forming a thin silicon oxide film is followed bythe step of forming a thick silicon oxide film covering the thin siliconoxide film by means of various types of known CVD processes to provide agate insulating film of a desired thickness.

In particular, the silicon oxide film is obtained by subjecting anorganic silane such as tetraethoxysilane (TEOS) as the silicon sourcetogether with an oxidizing agent such as oxygen, ozone, or nitrogenoxide, to a CVD process to form silicon oxide. The CVD processspecifically refers to a reduced pressure CVD, a normal pressure CVD, aphoto CVD, plasma CVD, and a combination thereof.

A silicon oxide film with still stable characteristics can be obtainedby forming a silicon oxide film by CVD, and then photo annealing thesilicon oxide film again using a visible light or a near infrared lightor thermally annealing at a temperature in the range of from 400 to 700°C., under an atmosphere of a gaseous compound of oxygen and nitrogen(e.g., N₂ O), or a mixed gas atmosphere (e.g., a 4:1 mixture of nitrogenand oxygen).

Furthermore, the inventors have discovered that a concentration ofelectron traps is undsirably high when the silicon oxide film is formedby an organic silane through CVD and the inventor considered that thetraps are related to Si--OH bondings. In accordance with another aspectof the invention, the silicon oxide formed from an organic silane isannealed with a nitrogen containing atmosphere, for example, NH₃, N₂ H₄,N₂ and N₂ O at a temperature from 400-850° C., thereby, breaking theSi--OH bondings and improving the reliability of the gate insulatedstructure.

In the process according to the present invention, light is preferablyirradiated for a relatively short duration of from about 10 to 1,000seconds to elevate the surface temperature of the silicon film in thetemperature range of from 900 to 1,200° C. The light is irradiated tothe silicon film, preferably, at a wavelength absorbed by the siliconfilm and substantially not absorbed by the substrate. More specifically,a light of a wavelength falling in the range for a near infrared regionto the visible light region is preferred, and a light having awavelength of from 0.5 μm to 4 μm (e.g., an infrared light having a peakat a wavelength of 1.3 μm) is more preferred.

In the present invention described above, the thermal annealing ispreferably effected at such a temperature that would not unfavorablyinfluence the substrate as to form warping and shrinking thereon. Morespecifically, the thermal annealing is effected in the middletemperature range of from 400 to 700° C., and more preferably, in therange of from 500 to 600° C. In general, the thermal annealing isperformed at a temperature not higher than the deformation temperatureof the substrate, however, the strain energy accumulated inside thesubstrate can be released to sufficiently reduce the distortion bythermally treating the substrate prior to the thermal annealing.Accordingly, the thermal annealing in this case can be applied at atemperature not lower than the deformation temperature.

The crystalline silicon film for use in the present invention can befabricated by using a laser or an intense light equivalent thereto tocrystallize a non-crystalline silicon film, or by using a thermalannealing.

In accordance with another aspect of the invention, a thermal annealingat a temperature lower than the ordinary crystallization temperature forsolid phase growth can be effected using nickel or another metalelement. The elements for accelerating the crystallization include theGroup VIII elements of the periodic table, i.e., iron (Fe), cobalt (Co),nickel (Ni), ruthenium (Ru), rhodium (Rh), palladium (Pd), osmium (Os),iridium (Ir), and platinum (Pt). Also included are the transitionelements having the 3d electrons, i.e., scandium (Sc), titanium (Ti),vanadium (V), chromium (Cr), manganese (Mn), copper (Cu), and zinc (Zn).Further included are gold (Au) and silver (Ag) whose effect on thecrystallization is experimentally observed. The most effective among theelements enumerated above is nickel, and the operation of a TFT based onthe crystalline silicon film using the effect is verified.

A silicon film containing the elements above as an additive is observedto grow into acicular (needle-like) crystals. However, the crystalgrowth occurs not globally on the surface, and amorphous regions orregions of low crystallinity having a crystallinity equivalent to thatof the amorphous region are left between the crystals. The silicon filmcontaining any of the metal elements above grow into acicular crystalshaving a width of from 0.5 to 2 times the thickness of the film.Moreover, the crystal grows less along the width direction; i.e. in thedirection toward the sides of the crystal, not along thecrystallographic <111> orientation. Accordingly, the deterioration incharacteristics of the silicon film of this type has been found aserious problem when used in a TFT, because the amorphous region doesnot undergo crystallization even after an annealing effected for a longduration of time.

In the present invention, an intense light is irradiated to an amorphoussilicon film. In such a case, however, a part of the optical energy isutilized for the crystal growth to accelerate the film growth along thedirection toward the sides of the crystals. Accordingly, a densecrystalline silicon film can be obtained.

When using a ultraviolet light (UV) having a shorter wavelength than avisible light and the like, not only the silicon film but also thesubstrate material absorbs the light. Accordingly, the optimal durationof irradiating the light becomes shorter. For instance, the duration ofirradiating a light 248 nm in wavelength is preferably not longer than 1μsec. If the light is irradiated for a still longer duration, thesubstrate undergoes deformation due to the light absorbed at anexcessively large quantity. Thus, in case the light is irradiated for anextremely short period of time, the quantity of light must be selectedas such which instantaneously elevates the surface of the silicon filmto a temperature higher than 1,000° C. Since the temperature is raisedand lowered instantaneously, the oxidation can not proceed sufficientlyby a single irradiation. Accordingly, the light must be irradiated for aplurality of times. The thickness of the oxide film which results by therepeated irradiation depends on the irradiation times.

In case irradiation is effected for a short period of time using UV asthe light source, a laser operated in pulses, such as the excimer laser,is most preferred. An excimer laser has a pulse width of 100 nsec orless.

In the present invention, the substrate temperature may be elevated to amaximum of value of 600° C., and preferably, to 400° C.

The insulating film that is deposited by PVD or CVD after annealing thesilicon substrate by either irradiating an intense light or annealing ata medium temperature is generally a silicon oxide film, however, it maybe a silicon nitride film or a silicon oxynitride film. Furthermore, theirradiation of an intense light and the thermal annealing can berepeated for a plurality of times.

The thermal oxide film which is obtained by either irradiating anintense light or by annealing at a medium temperature is generallyprovided at a thickness of from 20 to 200 Å, and representatively, at athickness of 100 Å. It differs from a known film obtained by PVD or CVD,and is an extremely dense film of a uniform-thickness free frompinholes. Furthermore, it exhibits an ideal boundary with a siliconfilm. A thick insulating film, representatively, a silicon oxide film,is deposited on the thermal oxide film. Thus, a leak current due topinholes is further prevented from occurring, and the production yieldis still improved.

Furthermore, since a favorable interface is realized between the thermaloxide film and the silicon film, the use of the thermal oxide filmfurther improves the characteristic values and the reliability of theTFT. In a prior art process for fabricating a TFT as illustrated in FIG.4A, in particular, cavities tend to form on the edges of a silicon filmupon fabricating an island-like silicon film due to over etching. Thisis found to occur most frequently in case a soft base film having a highetching rate is used. A prior art PVD or CVD could not bury thecavities, and leak current was found to generate frequently by thepresence of cracks and the like (FIG. 4B).

In contrast to the prior art process described above, the formation ofcracks is of practically no problem for the semiconductor device of thepresent invention because a thermal oxide film of a uniform thicknessand free from defects such as pinholes is formed around the silicon film(FIG. 4C).

Previously, an oxide film of such a high quality was only obtained by athermal oxidation at high temperatures. However, this requirementgreatly limited the use of substrates. It can be seen that the presentinvention is free of such limitations concerning the heat resistance ofthe substrate.

Thus, the present invention provides a gate insulating film having asuperior quality and reliability by forming a pinhole-free thin anddense thermal oxide film of uniform thickness on the surface of anactive layer, either by irradiating an intense light at a wavelength notabsorbed by the substrate to the island-like silicon film provided asthe active layer of the TFT or by annealing the active layer in anoxidizing atmosphere at a temperature at which no warping or shrinkagemay occur on the substrate, and further superposing, on the thin thermaloxide film, a thick silicon oxide film by CVD using TEOS and anoxidizing gas such as oxygen.

Conventionally, an oxide film of such a superior quality above has beenobtained by thermal annealing at high temperatures. Accordingly, a greatlimitation had been posed on concerning the heat resistance. In theprocess and device according to the present invention, however, there isno limitation with respect to the heat resistance of the substratematerial. Thus, various types of glass materials are applicable for thesubstrate, and great effect is found in case a material having adeformation temperature in the range of from 550 to 700° C. is used. Itcan be seen that the present invention is greatly contributory to theindustry.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing features and other features will be described in moredetail with reference to the attached drawings in which:

FIGS. 1A-1D are cross sectional views showing a manufacturing process ofa semiconductor device in accordance with a first example of theinvention;

FIGS. 2A-2E are cross sectional views showing a manufacturing process ofa semiconductor device in accordance with a first example of theinvention;

FIGS. 3A and 3B are diagrams showing temperature cycles in a heatingstep in accordance with the first example of the invention;

FIGS. 4A-4B are cross sectional views showing a manufacturing process ofa semiconductor device in accordance with prior art;

FIG. 4C is a cross sectional view showing a manufacturing process of asemiconductor device in accordance with the present invention;

FIGS. 5A-5G are cross sectional views showing a manufacturing process ofa semiconductor device in accordance with a third example of theinvention;

FIGS. 6A-6G are cross sectional views showing a manufacturing process ofa semiconductor device in accordance with a fourth example of theinvention;

FIGS. 7A-7D are cross sectional views showing a manufacturing process ofa semiconductor device in accordance with a fifth example of theinvention;

FIGS. 8A-8D are cross sectional views showing a manufacturing process ofa semiconductor device in accordance with a sixth example of theinvention;

FIGS. 9A-9E are cross sectional views showing a manufacturing process ofa semiconductor-device in accordance with a seventh example of theinvention; and

FIGS. 10A-10E are cross sectional views showing a manufacturing processof a semiconductor device in accordance with a tenth example of theinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS OF THE INVENTION [EXAMPLE 1]

The present example relates to a circuit comprising a P-channel TFT(referred to simply hereinafter as a "PTFT") using a crystalline siliconfilm formed on a glass substrate and an N-channel TFT (referred tosimply hereinafter as an "NTFT") combined in a complementary structure.The constitution of the present example can be used as a switchingelement of pixel electrodes or a peripheral driver circuit ofactive-type liquid crystal display device, as well as in image sensorsand integrated circuits.

Referring to the step sequential-structures shown in FIGS. 1A-1D, theprocess for fabricating the circuit of the present invention isdescribed below. A 2000 Å thick film of silicon oxide was deposited bysputtering as a base film 102 on a Corning 7059 glass substrate 101. Thesubstrate is preferably subjected, either before or after depositing thebase film, to a step comprising annealing at a temperature higher thanthe deformation temperature, then gradually lowering the temperature toa temperature below the deformation point at a cooling rate of from 0.1to 1.0° C./minute, and again elevating the temperature (inclusive of theoxidation step according to the present invention using a lightirradiation or thermal annealing). In this manner, the substrate can beprevented from shrinking to facilitate the mask-aligning step. In caseof using a Corning 7059 substrate, it is preferably annealed for 1 to 4hours at a temperature in the range of from 620 to 660° C., graduallycooled at a rate of from 0.1 to 1.0° C./minute, preferably, at a rate offrom 0.1 to 0.3° C./minute,.and taking out the substrate after thetemperature thereof is lowered to a range of from 450 to 590° C.

Then, a film of an intrinsic (I-type) amorphous silicon film wasdeposited by plasma-assisted CVD (hereinafter simply referred tosometimes as "plasma CVD") to a thickness of from 500 to 1,500 Å, forexample, 1,000 Å. The amorphous silicon film thus deposited was annealedfor 48 hours at 600° C. under a nitrogen inert gas atmosphere at theatmospheric pressure for crystallization. The silicon film thus obtainedwas then patterned to island-like silicon film portions 103 from 10 to1,000 μm in size to obtain the active layer of the TFT.

Then, an infrared light having a peak in the wavelength range of from0.5 to 4 μm, specifically in this case, in the wavelength of from 0.8 to1.4 μm, was irradiated under a gaseous oxygen atmosphere for a durationof from 30 to 180 seconds to form a silicon oxide film 104 on thesurface-of the active layer 103 (FIG. 1A). It is also possible to addfrom 0.1 to 10% of hydrogen chloride (HCl) into the atmosphere.

The infrared radiation was irradiated using a halogen lamp as the lightsource. The intensity of the infrared light was controlled as such thatthe temperature measured on a monitoring single crystal silicon wafermay fall in the range of from 900 to 1,200° C. More specifically, thetemperature of a thermocouple buried in the silicon wafer was monitored,and the measured value was fed back to the light source of the infraredradiation. In the present example, the temperature was raised andlowered according to a scheme illustrated in FIG. 3A or FIG. 3B. Theheating rate was constant in the range of from 50 to 200° C./second,while the cooling was left to open air so that the temperature maydecrease at a rate in the range of from 20 to 100° C./second.

FIG. 3A shows a general type of a temperature cycle comprising a heatingstep a, a retaining step b, and a cooling step c. In a process of thistype, however, the substrate is subjected to a rapid heating from roomtemperature to a high temperature of 1,000° C., and to a rapid coolingfrom the high temperature to room temperature again. Such a heatingcycle greatly influences the silicon film and the substrate, and in somecases, it may unfavorably cause the separation of the silicon film.

The heating cycle illustrated in FIG. 3B is provided as a means forovercoming the problem above. Referring to FIG. 3B, a pre-heating step dand a post-heating step f are provided additionally to keep thesubstrate and the silicon film in the temperature range of 200 to 500°C. not influencing the substrate and the silicon film before achievingthe retention step.

The infrared radiation irradiated to the silicon film selectively heatsthe irradiated portion. Accordingly, the heating effect on the glasssubstrate can be minimized. Furthermore, the defects and dangling bondsin the silicon film can be effectively reduced by irradiating theinfrared light. Thus, a silicon oxide film 104 having a thickness offrom 50 to 150 Å was obtained by infrared irradiation.

Then, a 1,000 Å thick silicon oxide film 105 was deposited as the gateinsulating film by plasma CVD. The CVD process was effected using TEOS(tetraethoxysilane; Si(OC₂ H₅)₄) and oxygen while maintaining thesubstrate temperature in the range of from 300 to 550° C., for example,at 400° C., during the deposition of the film. Trichloroethylene (TCE)gas was used in addition to TEOS and oxygen. TEOS, oxygen, and TCE wereflown at a ratio of 5:10:1, but the flow ratio of the gases can bechanged as desired according to the characteristics of the CVD apparatusused, since the ratio of the gases is not limited thereto (FIG. 1B).

The TCE mixed into the gas mixture supplies chlorine atoms to thesilicon oxide film through the reaction. Chlorine prevents reaction fromoccurring between the electrodes with the film, or blocks mobile atomssuch as those of sodium which intrude from the exterior into the film.The same effect can be obtained by mixing phosphorus into the siliconoxide film.

The thus formed silicon oxide film was annealed for one hour in aoxynitride gas (N₂ O) at a temperature from 400-850° C., for example,580° C.

Subsequently, a polycrystalline silicon film containing from 0.01 to0.2% phosphorus was deposited by reduced pressure CVD to a thickness offrom 3,000 to 8,000 Å, for example, at a thickness of 6,000 Å. Thesilicon film thus obtained was patterned to form gate electrodes 106 and107. Then, impurities for rendering the active region (for source/drainand channel regions) either P- or N-conductive were incorporated in aself-aligned manner by ion doping (plasma doping) into the active regionusing the gate electrodes 106 and 107 as masks. Phosphine (PH₃) ordiborane (B₂ H₆) was used as the doping gas. In case the former(phosphine) is used, the accelerating voltage is set in the range offrom 60 to 90 kV, for example, at 80 kV to incorporate phosphorus at adose of from 1×10¹⁵ to 8×10¹⁵ cm⁻², for example, 5×10¹⁵ cm⁻². In casethe latter (diborane) is used, the voltage is set in the range of from40 to 80 kV, for instance, at 65 kV, to introduce boron at a dose offrom 1×10¹⁵ to 8×10¹⁵ cm⁻², for example, 2×10¹⁵ cm⁻². In effectingdoping, phosphorus and boron were each introduced selectively in thepredetermined regions by covering the other region with a photoresist.Thus, N-type impurity regions 111 and 113, P-type impurity regions 108and 110 were obtained as a result to form the region for a P-channel TFT(PTFT) and the region for an N-channel TFT (NTFT).

The structure was annealed thereafter by irradiating a laser radiation.The laser radiation used herein was a KrF excimer laser (having awavelength of 248 nm and a pulse width of 20 nsec), but the type oflaser is not limited thereto. The laser irradiation was effected at anenergy density of 200 to 400 mJ/cm², for example, at 250 mJ/cm², and byapplying from 2 to 10 shots, specifically, 2 shots, per site. It isfurther effective to heat the substrate during the laser beamirradiation to maintain the substrate temperature in the range of fromabout 200 to 450° C. (FIG. 1C).

This step can be effected by lamp annealing using a near infraredradiation. The near infrared radiation is absorbed more selectively bycrystallized silicon as compared with amorphous silicon, and aneffective annealing comparable to a thermal annealing at a temperatureof 1,000° C. or higher can be realized. The glass substrate, however,hardly absorbs the light in the wavelength of from 0.5 to 4 μmcorresponding to a range of from near infrared region to the visibleregion (but absorbs light-in the far infrared region). Accordingly, thisstep can be effected in a short period of time without heating the glasssubstrate to a high temperature. Thus, the step above can be said idealfor a case in which the shrinkage of the glass substrate is foundproblematic.

Subsequently to the step above, a silicon oxide film 114 was depositedat a thickness of 6,000 Å by plasma CVD to provide in interlayerdielectric. Polyimide can be used in the place of silicon oxide. Contactholes were formed further to form electrodes with wiring 115, 116, and117 using a metallic material, for example, a multilayered film oftitanium nitride and aluminum. A semiconductor circuit comprising TFTsin a complementary configuration was thus implemented by annealing theresulting structure at 350° C. for 30 minutes under gaseous hydrogenatmosphere at a pressure of 1 atm (FIG. 1D).

The circuit described in the foregoing comprises a PTFT and an NTFTcombined in a CMOS structure. However, the process above can be appliedto the fabrication of two separate TFTs by simultaneously fabricatingtwo TFTs, and then splitting the resulting structure into two TFTs. TheNTFT thus obtained according to the present example was found to have amobility of from 110 to 200 cm² /Vs and an S value in the range of from0.2 to 0.5 V/digit. The PTFT was found to have a mobility in the rangeof from 50 to 120 cm² /Vs and an S value in the range of from 0.4 to 0.6V/digit. As compared to the cases in which the gate dielectric is formedby known PVD or CVD processes, the TFT according to the presentinvention was found to have a mobility of 20% or more higher, and an Svalue reduced to a half of the conventional values.

[EXAMPLE 2]

The present example refers to another complementary TFT circuit.Referring to FIG. 2, the present example is described in detail below. ACorning 7059 glass substrate 201 was annealed in the temperature rangeof from 620 to 660° C. for a duration of 1 to 4 hours, gradually cooledat a rate of from 0.1 to 1.0° C./minute, preferably, at a rate of from0.1 to 0.3° C./minute to a temperature in the range of from 450 to 590°C., and was taken out from the heat treatment apparatus. A base film 202was formed on the substrate thereafter, and an amorphous silicon film203 was deposited at a thickness of from 300 to 800 Å by plasma CVD. Anickel film from 20 to 50 Å in thickness was deposited by sputtering inthe region 205 using a silicon oxide mask 204 having a thickness of1,000 Å. The nickel film need not be a continuous film.

Then, the resulting structure was subjected to thermal annealing in agaseous nitrogen atmosphere in the temperature range of from 500 to 620°C., for example, at 550° C., for a duration of 8 hours to crystallizethe silicon film 203. The crystallization occurred as such that thecrystals were found to initiate their growth from the region 205 of thesilicon film in contact with nickel, and to proceed the growth in adirection in parallel with the substrate, i.e., along the directionindicated with an arrow in the figure (FIG. 2A).

Then, an island-like active layer region 205 was formed by patterningthe silicon film 203. The active layer was etched anisotropically in thedirection perpendicular to the active layer by RIE process. In FIG. 2A,the hatched region indicates the region in which nickel is present athigh concentration. This particular region was found to contain nickelat a concentration about one digit higher than the crystallized regionssandwiched by those nickel-rich regions. Thus, the channel formingregion of the TFT in this example was formed in regions other than thoseregions containing nickel at a high concentration. The nickelconcentration of the active layer in this example was found to be in therange of about 10¹⁷ to 10¹⁹ cm⁻³.

The substrate was annealed thereafter under gaseous oxygen atmosphere at600° C. for a duration of 1 hour. As a result, a thermal oxide film 206having a thickness of from 20 to 200 Å, representatively, from 40 to 100Å, was formed on the surface of the active layer. This step furtherimproves the crystallinity of the region previously crystallized bythermal annealing (FIG. 2B).

A silicon oxide gate dielectric (about 70 to 120 nm in thickness;typically, 120 nm) 207 was formed by plasma CVD under a gaseous oxygenatmosphere using tetraethoxysilane (TEOS). From 3 to 50% oftrichloroethylene (TCE) was added into the gas flow with respect to TEOSduring the film deposition while maintaining the temperature of thesubstrate to 350° C. After forming a silicon oxide film 207, theresulting structure was annealed again under a gaseous oxygen atmosphereat 600° C. for a duration of 1 hour. The gate dielectric 207 wasestablished in this manner (FIG. 2C).

Subsequently, an aluminum film containing from 0.01 to 0.2% of scandiumwas deposited by sputtering to a thickness of 6,000 Å, and was patternedto form gate electrodes 209 and 210. The periphery of the gateelectrodes was covered with anodic oxide 211 and 212 by anodicallyoxidizing the periphery thereof. The anodic oxidation was effected in anethylene glycol solution containing from 1 to 5% tartaric acid. Theoxide film 211 and 212 thus obtained were each 2,000 Å in thickness.Since the oxide 211 and 212 can be formed to such a thickness capable offorming an offset gate region, the length of the offset gate region canbe determined by the anodic oxidation step.

Impurities for rendering the source and the drain regions N-type andP-type conductive were introduced in a self-aligned manner by ion dopingto form a P-type source region 213, a P-type drain region 215, an N-typesource region 216, an N-type drain region 218, and channel formingregions 214 and 217. Then, a laser radiation was irradiated using a KrFexcimer laser to recover the crystallinity of the silicon film which wasdamaged by the doping of impurities. The laser radiation was applied atan energy density of 250 to 300 mJ/cm². The sheet resistance of thesource/drain regions of the TFT was found to be in the range of from 300to 800 Ω/cm² after the laser irradiation (FIG. 2D). This step may beconducted otherwise by lamp annealing.

An interlayer dielectric 219 using silicon oxide or polyimide was formedthereafter, and contact hole was formed therethrough to form electrodes220, 221, and 222 in the source/drain regions of the TFT using amultilayered chromium/aluminum film. The structure was completed into aTFT by annealing the structure at a temperature of from 200 to 400° C.for 2 hours in hydrogen to effect hydrogenation. To further improve themoisture resistance, a passivation film can be formed over the entiresurface using silicon nitride and the like (FIG. 2E).

[EXAMPLE 3]

FIGS. 5A-5G shows the step-sequential cross section structures obtainedin the fabrication process according to the present example. A 2,000 Åthick silicon oxide film was deposited as a base film 502 on a Corning7059 glass substrate 501. The substrate was then annealed in thetemperature range of from 620 to 660° C. for a duration of 1 to 4 hours,gradually cooled at a rate of from 0.1 to 1.0° C./minute, preferably, ata rate of from 0.1 to 0.3° C./minute to a temperature in the range offrom 450 to 590° C., and was taken out from the heat treatmentapparatus.

Then, a film of an intrinsic (I-type) amorphous silicon film wasdeposited by plasma-assisted CVD to a thickness of from 500 to 1,500 Å,for example, 1,000 Å. The amorphous silicon film thus deposited wasannealed for 48 hours at 600° C. under a nitrogen inert gas atmosphereat the atmospheric pressure for crystallization. The silicon film thusobtained was then patterned to island-like silicon film portions 503from 10 to 1,000 μm in size to obtain the active layer of the TFT. Aninfrared light having a peak in the wavelength range of from 0.5 to 4μm, specifically in this case, in a wavelength of from 0.8 to 1.4 μm,was irradiated under a gaseous oxygen atmosphere for a duration of from30 to 180 seconds to form a silicon oxide film 504 on the surface of theactive layer 503. The infrared radiation was irradiated under the sameconditions as those used in Example 1 (FIG. 5A). It is also possible toadd from 0.1 to 10% of hydrogen chloride (HCl) into the atmosphere.

Then, a 1,000 Å thick silicon oxide film 505 was deposited as a gatedielectric by plasma CVD. The CVD process was effected using TEOS(tetraethoxysilane; Si(OC₂ H₅)₄) and oxygen while maintaining thesubstrate temperature in the range of from 300 to 550° C., for example,at 400° C., during the deposition of the film. Trichloroethylene (TCE)gas was used in addition to TEOS and oxygen. TEOS, oxygen, and TCE wereflown at a ratio of 5:10:1, but the flow ratio of the gases can bechanged as desired according to the characteristics of the CVD apparatusused, since the ratio of the gases is not limited thereto.

Subsequently, a polycrystalline silicon film containing from 0.01 to0.2% phosphorus was deposited by reduced pressure CVD to a thickness offrom 3,000 to 8,000 Å, for example, at a thickness of 6,000 Å. The gateelectrode need not be made from polycrystalline silicon, and otherusable films include a multilayered film of silicon and molybdenum, amultilayered film of silicon and molybdenum silicide, a multilayeredfilm of silicon and titanium, a multilayered film of silicon andtitanium silicide, a multilayered film of silicon and tungsten, and amultilayered film of silicon and tungsten silicide.

The silicon film thus obtained was patterned to form a gate electrodes506. Then, an impurity for rendering the active region (for source/drainand channel regions) N-conductive was incorporated in a self-alignedmanner by ion doping (plasma doping) into the active region using thegate electrode 506 as a mask. Phosphine (PH₃) was used as the dopinggas, and doping was effected by setting the accelerating voltage in therange of from 60 to 90 kV, for example, at 80 kV, to incorporatephosphorus at a dose of from 1×10¹⁵ to 8×10¹⁵ cm⁻², for example, 5×10¹⁵cm⁻². The N-type impurity regions 507 and 509 were thus obtained as aresult.

The structure was annealed thereafter by irradiating a laser radiation.The laser radiation used herein was a KrF excimer laser (having awavelength of 248 nm and a pulse width of 20 nsec), but the type oflaser is not limited thereto. The laser irradiation was effected at anenergy density of 200 to 400 mJ/cm², for example, at 250 mJ/cm², and byapplying from 2 to 10 shots, specifically, 2 shots, per site. It isfurther effective to heat the substrate during the laser beamirradiation to maintain the substrate temperature in the range of fromabout 200 to 450° C. (FIG. 5B). This step can be effected by lampannealing using a near infrared radiation.

Subsequent to the annealing above, a silicon oxide film 510 wasdeposited by plasma CVD to a thickness of from 3,000 to 9,000 Å, forexample, at a thickness of 9,000 Å (FIG. 5C).

The silicon oxide film 510 was subjected to anisotropic dry etchingusing a known RIE process. Thus, on the side of a gate electrode 506having a height of 9,000 Å, the thickness along the direction of theheight was found to be about twice the thickness of the silicon oxidefilm (which was deposited to a thickness of 9,000 Å). The silicon oxidefilm 505 provided as the gate dielectric was etched at the same time toexpose the source/drain regions 507 and 509 to air. Thus was obtained aninsulator 511 as a spacer shaped approximately into a triangle on theside of the gate electrode (FIG. 5D).

Referring to FIG. 5E, a titanium film 512 was deposited to a thicknessof from 50 to 500 Å by means of sputtering. The resulting titanium filmwas heated to a temperature range of from 250 to 450° C. to formtitanium silicide regions 513 and 515 on the impurity regions(source/drain regions) by allowing titanium to undergo reaction withsilicon. In addition, a titanium silicide region 514 was formed throughthe reaction of titanium with the material constituting the gateelectrode (i.e., phosphorus-doped silicon). The practical sheetresistance of the source and drain regions was found to be 10 Ω/□ orlower, because the resistivity of titanium silicide is as low as toyield a value in the range of from 30 to 100 μΩ·cm.

This step can be effected by lamp annealing using an infrared light. Incase lamp annealing is effected, the temperature of the surface of theobject must fall in the range of from 600 to 1,000° C. If lamp annealingis effected at 600° C., the annealing must endure for several minutes.If the annealing is effected at a surface temperature of 1,000° C., onthe other hand, the irradiation of light must be completed withinseveral seconds (FIG. 5F).

The titanium film thus obtained was then etched using an etchingsolution comprising a 5:2:2 mixture of hydrogen peroxide, ammonia, andwater. The titanium silicide layers 513, 514, and 515 can be left behindbecause they cannot be etched by the solution above. Finally, a completeTFT as shown in FIG. 5G was implemented by forming a silicon oxide filmat a thickness of 5,000 Å by CVD as an interlayer dielectric 516 overthe entire surface of the structure, boring contact holes to the sourceand drain of the TFT, and forming aluminum electrodes with wiring 517and 518. Since the structure according to the present example comprisesthe aluminum electrodes 517 and 518 not in direct contact with siliconin the source/drain regions, an extremely favorable contact can beobtained. The complete TFT thus obtained may be further subjected tohydrogen annealing in the temperature range of from 200 to 400° C. toactivate the impurity regions.

[EXAMPLE 4]

FIGS. 6A-6G show the step-sequential cross section structures obtainedin the fabrication process according to the present example. A 2,000 Åthick silicon oxide film was deposited as a base film 602 on a Corning7059 glass substrate 601. The substrate was then annealed in thetemperature range of from 620 to 660° C. for a duration of 1 to 4 hours,gradually cooled at a rate of from 0.1 to 1.0° C./minute, preferably, ata rate of from 0.1 to 0.3° C./minute to a temperature in the range offrom 450 to 590° C., and was taken out from the heat treatmentapparatus.

Then, a film of an intrinsic (I-type) amorphous silicon film wasdeposited by plasma-assisted CVD to a thickness of from 500 to 1,500 Å,for example, 1,000 Å. The amorphous silicon film thus depositedcrystallized in the same manner as in Example 2 by using nickel as acatalyst. Thus, the crystallization was effected for a duration of 4hours at 550° C. under a gaseous nitrogen atmosphere at the atmosphericpressure. The silicon film thus obtained was then patterned toisland-like silicon film portions 603 from 10 to 1,000 μm in size toobtain the active layer of the TFT. The surface of the active layer 603was coated with a silicon oxide film 604 by oxidizing the active layerat 600° C. for a duration of one hour in a gaseous oxygen atmosphere(FIG. 6A).

Then, a 1,000 Å thick silicon oxide film 605 was deposited as the gatedielectric by plasma CVD. The CVD process was effected using TEOS(tetraethoxysilane; Si(OC₂ H₅)₄) and oxygen while maintaining thesubstrate temperature in the range of from 300 to 550° C., for example,at 350° C., during the deposition of the film. Trichloroethylene (TCE)gas was used in addition to TEOS and oxygen. TEOS, oxygen, and TCE wereflown representatively at a ratio of 5:10:1, but the flow ratio of thegases can be changed as desired according to the characteristics of theCVD apparatus used, since the ratio of the gases is not limited thereto.

Subsequently, an aluminum film containing from 0.01 to 0.2% of scandiumwas deposited by electron beam deposition to a thickness of from 2,000 Åto 5 μm, and was patterned to form a gate electrode 606. The peripheryof the gate electrode 606 was covered with anodic oxide 607 having athickness of from 500 to 2,500 Å by anodically oxidizing the peripheryof the gate electrodes in an electrolytic solution. The conditions andthe detail of the anodic oxidation were the same as those described inJapanese patent application Hei-4-30220 filed Jan. 21, 1992. The gateelectrode need not be a single layer of aluminum, and other usable filmsinclude a multilayered film of phosphorus-doped silicon and aluminum. Asa matter of course, other anodically oxidizable materials such astitanium and tantalum can be used as well.

Impurities were introduced by ion doping into the island-like siliconfilm provided to each of the TFTs using the gate electrode portions(i.e., the gate electrode and the anodic oxide film provided to theperiphery thereof) as masks. Thus were obtained the source/drain regions(impurity regions) 608 and 610 as shown in FIG. 6B. Phosphorus must beintroduced as the impurity by using phosphine (PH₃) as the doping gas incase an NMOS TFT is to be formed. In case of forming a PMOS TFT, on theother hand, boron must be introduced as the impurity by using diborane(B₂ H₆) as the doping-gas. Thus, the impurities were introduced at adose of from 2×10¹⁴ to 8×10¹⁴ cm⁻² and at an accelerating voltage offrom 10 to 90 keV.

The structure was annealed thereafter by irradiating a laser radiation.The laser radiation used herein was a KrF excimer laser (having awavelength of 248 nm and a pulse width of 20 nsec), but the type oflaser is not limited thereto. The laser irradiation was effected at anenergy density of 200 to 400 mJ/cm², for example, at 250 mJ/cm², and byapplying from 2 to 10 shots, for example, 2 shots, per site. It isfurther effective to heat the substrate during the laser beamirradiation to maintain the substrate temperature in the range of fromabout 200 to 450° C. (FIG. 6B). This step can be effected by lampannealing using a near infrared radiation.

Subsequent to the annealing above, a silicon oxide film 611 wasdeposited by plasma CVD to a thickness of from 4,000 Å to 1.5 μm, forexample, at a thickness of 9,000 Å (FIG. 6C).

The silicon oxide film 611 was subjected to anisotropic dry etchingusing a known RIE process. Thus, on the side of a gate electrode 606having a height of 9,000 Å, the thickness along the direction of theheight was found to be about twice the thickness of the silicon oxidefilm. The silicon oxide film 605 provided as the gate dielectric wasetched at the same time to expose the source/drain regions 608 and 610.Thus was obtained an insulator 612 as a spacer on the side of the gateelectrode (FIG. 6D).

Referring to FIG. 6E, a titanium film 613 was deposited to a thicknessof from 50 to 500 Å by means of sputtering. The resulting titanium filmwas heated to a temperature range of from 250 to 450° C. to formtitanium silicide regions 614 and 615 on the impurity regions(source/drain regions) by allowing titanium to undergo reaction withsilicon. The heating treatment in this case is effected preferably inthe temperature range as such that no hillocks may form on the gateelectrode and the like.

This step can be effected by lamp annealing using an infrared light. Incase lamp annealing is effected, the temperature of the surface of theobject must fall in the range of from 600 to 1,000° C. If lamp annealingis effected at 600° C., the annealing must endure for several minutes.If the annealing is effected at a surface temperature of 1,000° C., onthe other hand, the irradiation of light must be completed withinseveral seconds (FIG. 6F).

The titanium film thus obtained was then etched using an etchingsolution comprising a 5:2:2 mixture of hydrogen peroxide, ammonia, andwater. The silicide layers 614 and 615 can be left behind because theycannot be etched by the solution above. Finally, a complete TFT as shownin FIG. 6G was implemented by depositing a silicon oxide film at athickness of 3,000 Å by CVD as an interlayer dielectric 616 over theentire surface of the structure, forming contact holes to the source anddrain of the TFT, and forming aluminum electrodes with wiring 617 and618. Thus was implemented a complete TFT.

[EXAMPLE 5]

The present example is a modification of the structure described inExample 1. For the sake of simplicity, the steps which can be effectedin the same manner as in Example are excluded from the followingexplanation.

The same process as that described in Example 1 was repeated up to theformation of a gate dielectric 105 as shown in FIG. 7B. Then, analuminum film containing from 0.01 to 0.2% of scandium was deposited bysputtering to a thickness of from 6,000 to 8,000 Å, 6,000 Å for instancein this case, and was patterned to form gate electrodes 106 and 107. Theperiphery of the gate electrodes was covered with anodic oxide 118 and119 by anodically oxidizing the periphery thereof. The anodic oxidationwas effected in an ethylene glycol solution containing from 1 to 5%tartaric acid. The oxide film 118 and 119 thus obtained were each 2,000Å in thickness. Since the oxide 118 and 119 can be formed to such athickness capable of forming an offset gate region, the length of theoffset gate region can be determined by the anodic oxidation step.

Then, impurities for rendering the active region (for source/drain andchannel regions) either P- or N-conductive were incorporated in aself-aligned manner by ion doping (plasma doping) into the active regionusing the gate electrode 106 and the peripheral oxide layer 118, and thegate electrode 107 and the peripheral oxide layer 119 as masks.Phosphine (PH₃) or diborane (B₂ H₆) was used as the doping gas. In casethe former (phosphine) is used, the accelerating voltage is set in therange of from 60 to 90 kV, for example, at 80 kV, to incorporatephosphorus at a dose of from 1×10¹⁵ to 8×10¹⁵ cm⁻², for example, 5×10¹⁵cm⁻². In case the latter (diborane) is used, the voltage is set in therange of from 40 to 80 kV, for instance, at 65 kV, to introduce boron ata dose of from 1×10¹⁵ to 8×10¹⁵ cm⁻², for example, 2×10¹⁵ cm⁻². Ineffecting doping, phosphorus and boron were each introduced selectivelyin the predetermined regions by covering the other region with aphotoresist. Thus, N-type impurity regions 111 and 113, P-type impurityregions 108 and 110 were obtained as a result to form the region for aP-channel TFT (PTFT) and the region for an N-channel TFT (NTFT).

The subsequent steps are the same as those of Example 1, and theexplanation thereof is therefore omitted.

The circuit described in the foregoing comprises a PTFT and an NTFTcombined in a CMOS structure. However, the process above can be appliedto the fabrication of two separate TFTs by simultaneously fabricatingtwo TFTs, and then splitting the resulting structure into two TFTs. TheNTFT thus obtained according to the present example was found to have amobility of from 110 to 150 cm² /Vs and an S value in the range of from0.2 to 0.5 V/digit. The PTFT was found to have a-mobility in the rangeof from 90 to 120 cm² /Vs and an S value in the range of from 0.4 to 0.6V/digit. As compared to the cases in which the gate dielectric is formedby known PVD or CVD processes, the TFT according to the presentinvention was found to have a mobility of 20% or more higher, and an Svalue reduced to a half of the conventional values.

[EXAMPLE 6]

The present Example also relates to a complementary TFT circuit. FIGS.8A-8D show schematically the step-sequential cross section structuresobtained in the fabrication process according to the present example. ACorning 7059 glass substrate 101 having a thickness of 1.1 mm and a sizeof 300×400 mm was first annealed for 1 hour at 640° C. in the samemanner as in Example 5, and was then gradually cooled to 580° C. at acooling rate of 0.2° C./minute. A silicon oxide base film 102 was formedat a thickness of 2,000 Å by plasma CVD. TEOS and oxygen were used asthe starting material gases for the CVD. The substrate was maintained ata temperature of 350° C. The silicon oxide base film can be deposited bymeans of sputtering instead of plasma CVD.

Then, an amorphous silicon film was deposited at a thickness of 500 Å byLPCVD or plasma CVD process. The resulting film was patterned to form anactive layer 103 for the TFT. After subjecting the resulting structureto dehydrogenation at 450° C. for a duration of 1 hour, laser radiationwas irradiated for crystallization. The laser radiation used herein wasa KrF excimer laser (having a wavelength of 248 nm). The laserirradiation was effected at an energy density of 200 to 450 mJ/cm², andby applying from 2 shots per site. The substrate was heated during thelaser beam irradiation to maintain the substrate temperature in therange of from about 350 to 500° C.

After the step of laser irradiation, the substrate was annealed ingaseous oxygen atmosphere at 600° C. for 1 hour. As a result, a thermaloxide film 104 was found to form on the surface of the active layer at athickness of from 20 to 200 Å, representatively, at a thickness of from40 to 100 Å (FIG. 8A).

A silicon oxide gate dielectric was formed at a thickness of from 70 to120 nm, typically at 120 nm, by plasma CVD using tetraethoxysilane(TEOS) as the starting material. During the film deposition,trichloroethylene (TCE) was added to TEOS at an amount of from 3 to 50%in terms of flow rate, and the substrate temperature was maintained at350° C. Thus was obtained a gate dielectric 105 (FIG. 8B).

A 6,000 Å thick aluminum film was formed thereafter by sputtering, andwas patterned to form gate electrodes 106 and 107. The periphery of thegate electrodes was covered with anodic oxide 118 and 119 in the samemanner as in Example 4.

N-type and P-type impurities were introduced in a self-aligned manner byion doping to form a P-type source region 108, a P-type drain region110, an N-type source region 111, an N-type drain region 113, andchannel forming regions 109 and 112. Then, a laser radiation wasirradiated using a KrF excimer laser to recover the crystallinity of thesilicon film which was damaged by the doping of impurities. The laserradiation was applied at an energy density of 250 to 300 mJ/cm². Thesheet resistance of the source/drain regions of the TFT was found to bein the range of from 300 to 800 Ω/cm² after the laser irradiation (FIG.8C). This step may be conducted otherwise by lamp annealing.

An interlayer dielectric 114 using silicon oxide or polyimide was formedthereafter, and contact hole was formed therethrough to form electrodes115, 116, and 117 in the source/drain regions of the TFT using amultilayered chromium/aluminum film. The structure was completed into aTFT by annealing the structure for 2 hours at a temperature range offrom 200 to 400° C. in hydrogen to effect hydrogenation. To furtherimprove the moisture resistance, a passivation film can be formed overthe entire surface using silicon nitride and the like (FIG. 8D).

[EXAMPLE 7]

Referring to FIGS. 9A-9E, the present Example is explained below. ACorning 7059 glass substrate 101 was annealed in the temperature rangeof from 620 to 660° C. for a duration of 1 to 4 hours, gradually cooledat a rate of from 0.1 to 1.0° C./minute, preferably, at a rate of from0.1 to 0.3° C./minute, to a temperature in the range of from 450 to 590°C., and was taken out from the heat treatment apparatus. A base film 102was formed on the substrate thereafter, and an amorphous silicon film103 was deposited at a thickness of from 300 to 800 Å by plasma CVD. Anickel film from 20 to 50 Å in thickness was deposited by sputtering inthe region 119 using a silicon oxide mask 118 having a thickness of1,000 Å. The nickel film need not be a continuous film.

Then, the resulting structure was subjected to thermal annealing in agaseous nitrogen atmosphere in the temperature range of from 500 to 620°C., for example, at 550° C., for a duration of 8 hours to crystallizethe silicon film 103. The crystallization occurred as such that thecrystals were found to initiate their growth from the region 119 of thesilicon film at which the silicon film was brought into direct contactwith nickel, and to proceed the growth in a direction in parallel withthe substrate, i.e., along the direction indicated with an arrow in thefigure (FIG. 9A).

Then, island-like active layer regions 120 and 121 were formed bypatterning the silicon film 103. The active layer was etchedanisotropically in the direction perpendicular to the active layer byRIE process. In FIG. 9A, the region 119 indicates the region in whichnickel is present at high concentration. Furthermore, the front edge ofcrystal growth was also found to contain nickel at high concentration.These particular regions were found to contain nickel at highconcentration about one digit higher than the crystallized regionssandwiched by the nickel-rich regions. Thus, the active regions 120 and121 were patterned in the regions other than those containing nickel ata high concentration. Accordingly, the active region for the TFT in thisexample was formed in the region containing almost no nickel. The nickelconcentration of the active layer in this example was found to be in therange of about 10¹⁷ to 10¹⁹ cm⁻³. A visible or a near infrared light wasirradiated under the same conditions as those in Example 1 to form asilicon oxide film 122 on the surface of the active layers 120 and 121to a thickness of from 50 to 150 Å, and also to improve thecrystallinity of the region which was crystallized previously by thermalannealing (FIG. 9B).

Then, in the same manner as in Example 4, a gate dielectric 105 wasdeposited (FIG. 9C), gate electrodes 106 and 107 were formed, P-type andN-type impurities were introduced, an interlayer dielectric 114 wasformed, contact holes were perforated, and metal lines 115, 116 and 117were formed (FIG. 9E).

[EXAMPLE 10]

Referring to FIG. 10 in which the process steps according to the presentExample is shown schematically, the Example is described below. Thepresent Example refers to a process which comprises forming a thin oxidefilm on the surface of an island-like silicon layer and accelerating thecrystallization of the silicon layer by irradiating a KrF excimer laserradiation (operated at a wavelength of 248 nm) under an oxidizingatmosphere. The process for fabricating a switching transistor for apixel in an active matrix circuit using the thus processed silicon filmis described.

Similar to the process of Example 7, a 2,000 Å thick silicon oxide basefilm 102 and a 500 Å thick amorphous silicon film 103 were formed on asubstrate 101 obtained by first annealing it at 640° C. for a durationof 1 hour and gradually cooling it to 580° C. at a rate of 0.2°C./minute. Furthermore, a silicon oxide film from 10 to 100 Å inthickness was formed on the surface of the amorphous silicon film 103 bymeans of thermal oxidation or by treating the surface with an oxidizingagent such as aqueous hydrogen peroxide.

An extremely thin nickel acetate layer 125 was formed thereafter by spincoating. The solvent used herein was water or ethanol, and theconcentration of nickel acetate was controlled to fall in the range offrom 10 to 50 ppm (FIG. 10A).

The resulting substrate was annealed at 550° C. for a duration of 4 to 8hours. As a result, the amorphous silicon film 103 was found tocrystallize by the crystallization accelerating effect cast by nickel.It was observed that a part of the film from one to several micrometersin size was left amorphous even after the crystallization.

The silicon film was etched thereafter by a known photolithographyprocess to obtain the island-like silicon region 126. The oxide filmwhich remained on the surface of the silicon film was removed in thisstep.

Then, the substrate was placed in a gaseous oxygen atmosphere, and a KrFexcimer laser was irradiated thereto. The laser irradiation was effectedat an energy density of 250 to 450 mJ/cm², and by applying from 10 to 50shots per site. A silicon oxide film 127 from 10 to 50 Å in thicknesswas obtained as a result. The energy density and the number of lasershots upon applying the laser radiation can be selected according to thesilicon oxide film 127 to be obtained. Thus, the amorphous regionremaining in the crystalline silicon film was found to crystallize, andthe crystallinity of the silicon film was also found to be improved.Thermal annealing can be applied again after the present step under thesame conditions as those described above (FIG. 10B).

A 1,200 Å thick silicon oxide film 128 was deposited as a gatedielectric by plasma CVD. TEOS (tetraethoxysilane; Si(OC₂ H₅)₄) andoxygen were used as the starting material gas, and the substrate wasmaintained in the temperature range of from 300 to 550° C., for example,at 400° C., during the deposition of the film (FIG. 10C).

Then, an aluminum film containing from 0.01 to 0.2% of scandium wasdeposited by sputtering to a thickness of from 3,000 to 8,000 Å, 6,000 Åfor instance in this case, and was patterned to form a gate electrode129.

Subsequently, an impurity for rendering the active region P-conductivewas incorporated in a self-aligned manner by ion doping into the activeregion using the gate electrode 129 as a mask. Diborane (B₂ H₆) was usedas the doping gas. Accordingly, the accelerating voltage was set in therange of from 40 to 80 kV, for example, at 65 kV, to introduce boron ata dose of from 1×10¹⁵ to 8×10¹⁵ cm⁻², for example, 5×10¹⁴ cm⁻². Thus,P-type impurity regions 130 and 131 were obtained. Annealing using KrFexcimer laser radiation (having a wavelength of 248 nm and a pulse widthof 20 nsec) was effected thereafter. The conditions were the same asthose of Example 1 (FIG. 10D).

A 6,000 Å thick silicon oxide film 132 was deposited thereafter as aninterlayer dielectric by plasma CVD, and contact holes were perforatedto form electrode with wiring 131 in the P-type impurity region 130using a metallic material, for instance, a multilayered film of titaniumnitride and aluminum. A silicon nitride film 133 as a passivation filmwas formed thereafter by plasma CVD at a thickness of from 2,000 to5,000 Å, for example, at a thickness of 3,000 Å. The resultingpassivation film and the silicon oxide film 132 were etched to form acontact hole in the impurity region 131. Finally, a clear electricallyconductive material, i.e., ITO (indium tin oxide) was formed bysputtering, and etched to provide a pixel electrode 134 (FIG. 10E).

Thus was obtained a pixel transistor for an active matrix circuit. Anactive matrix circuit can be readily obtained by arranging a pluralityof the elements above in a matrix. In the present example, a KrF excimerlaser was used, but the type of the laser is not limited thereto, andother types of laser can be used as well.

While various examples have been described, it is to be understood thatthe scope of the present invention should not be limited to theparticular examples of the invention. Many modifications may be madewithout departing the scope of the appended claims. For example, onlysilicon has been taught as the semiconductor material for formingsemiconductor devices. However, it is not necessary to limit the presentinvention to this material. Also, while the present invention isdirected to semiconductor devices formed on an insulating substrate suchas glass, the concept of the present invention is applicable to amanufacture of a thin film semiconductor device formed on asemiconductor substrate such as a monolithic IC.

What is claimed is:
 1. A method for manufacturing a semiconductor devicecomprising the steps of:forming a semiconductor film comprising siliconover a substrate having an insulating surface; forming an insulatingfilm comprising silicon oxide by plasma CVD; annealing said insulatingfilm by irradiation of first light in an atmosphere containing oxygenand nitrogen; forming a gate electrode adjacent to said semiconductorfilm with said insulating film interposed therebetween; introducing ionsof dopant impurity into said semiconductor film with said gate electrodeused as a mask; and annealing said semiconductor film in order toactivate said dopant impurity by lamp annealing, wherein said lampannealing is performed with an irradiation of second light having awavelength of 0.5 μm to 4 μm.
 2. The method of claim 1 wherein saidsubstrate is a glass substrate.
 3. A method of manufacturing asemiconductor device comprising:forming a semiconductor film comprisingsilicon over a substrate; oxidizing a surface of said semiconductor filmin an oxidizing gas containing chlorine by irradiating saidsemiconductor film with light; forming an insulating film comprisingsilicon oxide adjacent to said semiconductor film said insulating filmbeing formed by plasma CVD; annealing at least said insulating film byirradiation of a visible light after forming said insulating film; andforming a gate electrode adjacent to said semiconductor film with saidinsulating film interposed therebetween.
 4. A method according to claim3 wherein said gate electrode is located over said semiconductor film.5. A method of manufacturing a semiconductor device comprising:forming asemiconductor film comprising silicon over a substrate; forming aninsulating film comprising silicon oxide adjacent to said semiconductorfilm, said insulating film being formed by plasma CVD; annealing atleast said insulating film by irradiation of a visible light afterforming said insulating film; and forming a gate electrode adjacent tosaid semiconductor film with said gate insulating film interposedtherebetween, wherein said annealing is performed in an atmospherecontaining oxygen and nitrogen.
 6. A method according to claim 5 whereinsaid annealing is performed in a mixed gas of nitrogen and oxygen with aration 4:1.
 7. A method of manufacturing a semiconductor devicecomprising:forming a semiconductor film comprises silicon over asubstrate; oxidizing a surface of said semiconductor film in anoxidizing gas containing chlorine by irradiating said semiconductor filmwith light; forming an insulating film comprising silicon oxide adjacentto said semiconductor film, said insulating film being formed by plasmaCVD; annealing at least said insulating film by irradiation of aninfrared light after forming said insulating film and forming a gateelectrode adjacent to said semiconductor film with said insulating filminterposed therebetween.
 8. A method according to claim 7 wherein saidgate electrode is located over said semiconductor film.
 9. A method ofmanufacturing a semiconductor device comprising:forming a semiconductorfilm comprising silicon over a substrate; forming an insulating filmcomprising silicon oxide adjacent to said semiconductor film, saidinsulating film being formed by plasma CVD; annealing at least saidinsulating film by irradiation of an infrared light after forming saidinsulating film; and forming a gate electrode adjacent to saidsemiconductor film with said insulating film interposed therebetween,wherein said annealing is performed in an atmosphere containing oxygenand nitrogen.
 10. A method according to claim 9 wherein said annealingis performed in a mixed gas of nitrogen and oxygen with a ratio 4:1. 11.A method according to claim 9 wherein said insulating film comprises anoxide of said semiconductor film formed by oxidizing a surface of thesemiconductor film.
 12. A method of manufacturing a semiconductor devicecomprising:forming a semiconductor film comprising silicon over asubstrate; providing said semiconductor film with a material forpromoting a crystallization of said semiconductor film; crystallizingsaid semiconductor film by heating with an aid of said material;oxidizing a surface of the crystallized semiconductor film in anoxidizing gas containing chlorine by irradiating the crystallizedsemiconductor film with an infrared light.
 13. A method according toclaim 12 wherein a temperature of the surface of the crystallizedsemiconductor film is raised to 600 to 1000° C. by the irradiation ofsaid light.
 14. A method for manufacturing a semiconductor devicecomprising the steps of:forming a semiconductor film comprising siliconover a substrate having an insulating surface; forming a film comprisinga material on at least a portion of said semiconductor film wherein saidmaterial promotes crystallization of said semiconductor film; heatingsaid semiconductor film with said material in order to crystallize saidsemiconductor film; patterning said semiconductor film after saidheating step; irradiating a visible or a near infrared light to saidsemiconductor film in an oxidizing atmosphere after said patterningstep; forming an insulating film comprising silicon oxide adjacent tosaid semiconductor film by CVD; annealing said insulating film byirradiation of light in an atmosphere containing oxygen and nitrogen;forming a gate electrode adjacent to said semiconductor film with saidinsulating film interposed therebetween; doping one conductivity typeimpurity ions to said semiconductor film; and irradiating a nearinfrared light to said semiconductor film after said doping step. 15.The method of claim 14 wherein said material comprises nickel.
 16. Themethod of claim 14 wherein said material comprises one metal elementselected from a group consisting of Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Sc,Ti, V, Cr, Mn, Cu, Zn, Au and Ag.
 17. The method of claim 14 whereinsaid oxidizing atmosphere contains a halogen compound gas.
 18. A methodof manufacturing a semiconductor device comprising the steps of:forminga semiconductor film comprising silicon over a substrate having aninsulating surface; forming a film comprising a material in contact withat least a portion of said semiconductor film, wherein said materialpromotes crystallization of said semiconductor film; crystallizing saidsemiconductor film by irradiating a laser light after forming said filmcomprising said material; forming an oxide film on a surface of thesemiconductor film by heating after irradiating said laser light;forming an insulating film comprising a silicon oxide film adjacent tosaid semiconductor film by plasma CVD; annealing said insulating film byirradiation of light in an atmosphere containing oxygen and nitrogen;forming a gate electrode adjacent to said semiconductor film with saidinsulating film interposed therebetween; doping one conductivity typeimpurity ions into said semiconductor film; and irradiating a laserlight to said semiconductor film after said doping.
 19. The method ofclaim 18 wherein said material comprises nickel.
 20. The method of claim18 wherein said material comprises one metal element selected from agroup consisting of Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Sc, Ti, V, Cr, Mn,Cu, Zn, Au and Ag.
 21. A method for manufacturing a semiconductor devicecomprising the steps of:forming a semiconductor film comprising siliconover a substrate having an insulating surface; forming a film comprisinga material in contact with at least a portion of said semiconductorfilm, wherein said material promotes crystallization of saidsemiconductor film; crystallizing said semiconductor film by heatingwith said film comprising said material; patterning said crystallizedsemiconductor film in order to form at least one semiconductor island;irradiating an infrared light to said semiconductor island in order toform an oxide film, said infrared light heating said crystallizedsemiconductor film selectively; forming an insulating film comprisingsilicon oxide adjacent to said semiconductor island by CVD; annealingsaid insulating film by irradiation of light in a atmosphere containingoxygen and nitrogen; forming a gate electrode adjacent to saidsemiconductor island with said insulating film interposed therebetween;doping one conductivity type impurity ions into said semiconductorisland; and lamp annealing said semiconductor island after said doping.22. The method of claim 21 wherein said material comprises nickel. 23.The method of claim 22 wherein said material comprises one metal elementselected from a group consisting of Fe, Co, Ru, Rh, Pd, Os, Ir, Pt, Sc,Ti, V, Cr, Mn, Cu, Zn, Au and Ag.
 24. A method according to claim 1wherein said first light has a wavelength of 0.5 μm to 4 μm.
 25. Amethod according to claim 1 wherein said semiconductor film, saidinsulating film and said gate electrode constitute at least one thinfilm transistor, wherein said thin film transistor has a mobility offrom 110 to 200 cm² /Vs and has an S value of from 0.2 to 0.5 V/digit.26. A method according to claim 1 wherein said semiconductor film, saidinsulating film and said gate electrode constitute at least one thinfilm transistor, wherein said thin film transistor has a mobility offrom 50 to 120 cm² /Vs and has an S value of from 0.4 to 0.6 V/digit.27. A method according to claim 1 wherein said semiconductor device isused in at least one article selected from the group consisting of aswitching element of an active-type liquid crystal display device, aperipheral driver circuit of said active-type liquid crystal displaydevice, an image sensor and an integrated circuit.
 28. A methodaccording to claim 3 wherein said light has a wavelength of 0.5 μm to 4μm.
 29. A method according to claim 3 wherein said visible light has awavelength of 0.5 μm or more.
 30. A method according to claim 3 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 110 to 200 cm² /Vs and has an S valueof from 0.2 to 0.5 V/digit.
 31. A method according to claim 3 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 50 to 120 cm² /Vs and has an S valueof from 0.4 to 0.6 V/digit.
 32. A method according to claim 3 whereinsaid semiconductor device is used in at least one article selected fromthe group consisting of a switching element of an active-type liquidcrystal display device, a peripheral driver circuit of said active-typeliquid crystal display device, an image sensor and an integratedcircuit.
 33. A method according to claim 5 wherein said gate electrodeis located over said semiconductor film.
 34. A method according to claim5 wherein said visible light has a wavelength of 0.5 μm or more.
 35. Amethod according to claim 5 wherein said semiconductor film, saidinsulating film and said gate electrode constitute at least one thinfilm transistor, wherein said thin film transistor has a mobility offrom 110 to 200 cm² /Vs and has an S value of from 0.2 to 0.5 V/digit.36. A method according to claim 5 wherein said semiconductor film, saidinsulating film and said gate electrode constitute at least one thinfilm transistor, wherein said thin film transistor has a mobility offrom 50 to 120 cm² /Vs and has an S value of from 0.4 to 0.6 V/digit.37. A method according to claim 5 wherein said semiconductor device isused in at least one article selected from the group consisting of aswitching element of an active-type liquid crystal display device, aperipheral driver circuit of said active-type liquid crystal displaydevice, an image sensor and an integrated circuit.
 38. A methodaccording to claim 7 wherein said light has a wavelength of 0.5 μm to 4μm.
 39. A method according to claim 7 wherein said infrared light has awavelength of 4 μm or less.
 40. A method according to claim 7 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 110 to 200 cm² /Vs and has an S valueof from 0.2 to 0.5 V/digit.
 41. A method according to claim 7 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 50 to 120 cm² /Vs and has an S valueof from 0.4 to 0.6 V/digit.
 42. A method according to claim 7 whereinsaid semiconductor device is used in at least one article selected fromthe group consisting of a switching element of an active-type liquidcrystal display device, a peripheral driver circuit of said active-typeliquid crystal display device, an image sensor and an integratedcircuit.
 43. A method according to claim 9 wherein said gate electrodeis located over said semiconductor film.
 44. A method according to claim9 wherein said semiconductor film, said insulating film and said gateelectrode constitute at least one thin film transistor, wherein saidthin film transistor has a mobility of from 110 to 200 cm² /Vs and hasan S value of from 0.2 to 0.5 V/digit.
 45. A method according to claim 9wherein said semiconductor film, said insulating film and said gateelectrode constitute at least one thin film transistor, wherein saidthin film transistor has a mobility of from 50 to 120 cm² /Vs and has anS value of from 0.4 to 0.6 V/digit.
 46. A method according to claim 9wherein said semiconductor device is used in at least one articleselected from the group consisting of a switching element of anactive-type liquid crystal display device, a peripheral driver circuitof said active-type liquid crystal display device, an image sensor andan integrated circuit.
 47. A method of claim 12 wherein said materialcomprises one metal element selected from the group consisting of Fe,Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Sc, Ti, V, Cr, Mn, Cu, Zn, Au and Ag.48. A method of claim 12 wherein said infrared light has a wavelength of4 μm or less.
 49. A method according to claim 12 wherein saidsemiconductor film constitutes at least one thin film transistor,wherein said thin film transistor has a mobility of from 110 to 200 cm²/Vs and has an S value of from 0.2 to 0.5 V/digit.
 50. A methodaccording to claim 12 wherein said semiconductor film constitutes atleast one thin film transistor, wherein said thin film transistor has amobility of from 50 to 120 cm² /Vs and has an S value of from 0.4 to 0.6V/digit.
 51. A method according to claim 12 wherein said semiconductordevice is used in at least one article selected from the groupconsisting of a switching element of an active-type liquid crystaldisplay device, a peripheral driver circuit of said active-type liquidcrystal display device, an image sensor and an integrated circuit.
 52. Amethod according to claim 14 wherein said light has a wavelength of 0.5μm to 4 μm.
 53. A method according to claim 14 wherein saidsemiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 110 to 200 cm² /Vs and has an S valueof from 0.2 to 0.5 V/digit.
 54. A method according to claim 14 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 50 to 120 cm² /Vs and has an S valueof from 0.4 to 0.6 V/digit.
 55. A method according to claim 14 whereinsaid semiconductor device is used in at least one article selected fromthe group consisting of a switching element of an active-type liquidcrystal display device, a peripheral driver circuit of said active-typeliquid crystal display device, an image sensor and an integratedcircuit.
 56. A method according to claim 18 wherein said light has awavelength of 0.5 μm to 4 μm.
 57. A method according to claim 18 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 110 to 200 cm² /Vs and has an S valueof from 0.2 to 0.5 V/digit.
 58. A method according to claim 18 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 50 to 120 cm² /Vs and has an S valueof from 0.4 to 0.6 V/digit.
 59. A method according to claim 18 whereinsaid semiconductor device is used in at least one article selected fromthe group consisting of a switching element of an active-type liquidcrystal display device, a peripheral driver circuit of said active-typeliquid crystal display device, an image sensor and an integratedcircuit.
 60. A method according to claim 21 wherein said light has awavelength of 0.5 μm to 4 μm.
 61. A method according to claim 21 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 110 to 200 cm² /Vs and has an S valueof from 0.2 to 0.5 V/digit.
 62. A method according to claim 21 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 50 to 120 cm² /Vs and has an S valueof from 0.4 to 0.6 V/digit.
 63. A method according to claim 21 whereinsaid semiconductor device is used in at least one article selected fromthe group consisting of a switching element of an active-type liquidcrystal display device, a peripheral driver circuit of said active-typeliquid crystal display device, an image sensor and an integratedcircuit.
 64. A method for manufacturing a semiconductor devicecomprising the steps of:forming a semiconductor film comprising siliconover a substrate having an insulating surface; oxidizing a surface ofsaid semiconductor film in an oxidizing gas containing chlorine byirradiating said semiconductor film with first light; forming aninsulating film comprising silicon oxide by CVD; forming a gateelectrode adjacent to said semiconductor film with said insulating filminterposed therebetween; introducing ions of dopant impurity into saidsemiconductor film with said gate electrode used as a mask; andannealing said semiconductor film in order to activate said dopantimpurity by lamp annealing, wherein said lamp annealing is performedwith an irradiation of second light.
 65. A method according to claim 64wherein each of said first and second light has a wavelength of 0.5 μmto 4 μm.
 66. A method according to claim 64 wherein said semiconductorfilm, said insulating film and said gate electrode constitute at leastone thin film transistor, wherein said thin film transistor has amobility of from 110 to 200 cm² /Vs and has an S value of from 0.2 to0.5 V/digit.
 67. A method according to claim 64 wherein saidsemiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 50 to 120 cm² /Vs and has an S valueof from 0.4 to 0.6 V/digit.
 68. A method according to claim 64 whereinsaid semiconductor device is used in at least one article selected fromthe group consisting of a switching element of an active-type liquidcrystal display device, a peripheral driver circuit of said active-typeliquid crystal display device, an image sensor and an integratedcircuit.
 69. A method of manufacturing a semiconductor devicecomprising:forming a semiconductor film comprising silicon over asubstrate; providing said semiconductor film with a material forpromoting a crystallization of said semiconductor film; crystallizingsaid semiconductor film by heating with an aid of said material;oxidizing a surface of said crystallized semiconductor film in anoxidizing gas by irradiating the crystallized semiconductor film withfirst light; forming an insulating film comprising silicon oxideadjacent to said crystallized semiconductor film; and annealing saidinsulating film by irradiation of second light in an atmospherecontaining oxygen and nitrogen.
 70. A method according to claim 69wherein each of said first and second light has a wavelength of 0.5 μmto 4 μm.
 71. A method of claim 69 wherein said material comprises onemetal element selected from the group consisting of Fe, Co, Ni, Ru, Rh,Pd, Os, Ir, Pt, Sc, Ti, V, Cr, Mn, Cu, Zn, Au and Ag.
 72. A methodaccording to claim 69 wherein said semiconductor film constitutes atleast one thin film transistor, wherein said thin film transistor has amobility of from 110 to 200 cm² /Vs and has an S value of from 0.2 to0.5 V/digit.
 73. A method according to claim 69 wherein saidsemiconductor film constitutes at least one thin film transistor,wherein said thin film transistor has a mobility of from 50 to 120 cm²/Vs and has an S value of from 0.4 to 0.6 V/digit.
 74. A methodaccording to claim 69 wherein said semiconductor device is used in atleast one article selected from the group consisting of a switchingelement of an active-type liquid crystal display device, a peripheraldriver circuit of said active-type liquid crystal display device, animage sensor and an integrated circuit.
 75. A method for manufacturing asemiconductor device comprising the steps of:forming a semiconductorfilm comprising silicon over a substrate having an insulating surface;forming a film comprising a material in contact with at least a portionof said semiconductor film, wherein said material promotescrystallization of said semiconductor film; heating said semiconductorfilm with said material in order to crystallize said semiconductor film;patterning said semiconductor film after said heating step; oxidizing asurface of said semiconductor film in an oxidizing gas containingchlorine by irradiating said semiconductor film with first light aftersaid patterning step; forming an insulating film comprising siliconoxide adjacent to said semiconductor film by CVD; forming a gateelectrode adjacent to said semiconductor film with said insulating filminterposed therebetween; doping one conductivity type impurity ions intosaid semiconductor film; and irradiating second light to saidsemiconductor film after said doping step.
 76. A method according toclaim 75 wherein each of said first and second light has a wavelength of0.5 μm to 4 μm.
 77. A method of claim 75 wherein said material comprisesone metal element selected from the group consisting of Fe, Co, Ni, Ru,Rh, Pd, Os, Ir, Pt, Sc, Ti, V, Cr, Mn, Cu, Zn, Au and Ag.
 78. A methodaccording to claim 75 wherein said semiconductor film, said insulatingfilm and said gate electrode constitute at least one thin filmtransistor, wherein said thin film transistor has a mobility of from 110to 200 cm² /Vs and has an S value of from 0.2 to 0.5 V/digit.
 79. Amethod according to claim 75 wherein said semiconductor film, saidinsulating film and said gate electrode constitute at least one thinfilm transistor, wherein said thin film transistor has a mobility offrom 50 to 120 cm² /Vs and has an S value of from 0.4 to 0.6 V/digit.80. A method according to claim 75 wherein said semiconductor device isused in at least one article selected from the group consisting of aswitching element of an active-type liquid crystal display device, aperipheral driver circuit of said active-type liquid crystal displaydevice, an image sensor and an integrated circuit.
 81. A method formanufacturing a semiconductor device comprising the steps of:forming asemiconductor film comprising silicon over a substrate having aninsulating surface; forming a film comprising a material in contact withat least a portion of said semiconductor film, wherein said materialpromotes crystallization of said semiconductor film; crystallizing saidsemiconductor film by irradiating a laser light after forming said filmcomprising said material; forming an oxide film on a surface of saidsemiconductor film in an oxidizing gas containing chlorine byirradiating said semiconductor film with light after said crystallizingstep; forming an insulating film comprising a silicon oxide filmadjacent to said semiconductor film by CVD; forming a gate electrodeadjacent to said semiconductor film with said insulating film interposedtherebetween; doping one conductivity type impurity ions into saidsemiconductor film; and irradiating a laser light to said semiconductorfilm after said doping.
 82. A method according to claim 81 wherein saidlight has a wavelength of 0.5 μm to 4 μm.
 83. A method of claim 81wherein said material comprises one metal element selected from thegroup consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Sc, Ti, V, Cr,Mn, Cu, Zn, Au and Ag.
 84. A method according to claim 81 wherein saidsemiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 110 to 200 cm² /Vs and has an S valueof from 0.2 to 0.5 V/digit.
 85. A method according to claim 81, whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 50 to 120 cm² /Vs and has an S valueof from 0.4 to 0.6 V/digit.
 86. A method according to claim 81 whereinsaid semiconductor device is used in at least one article selected fromthe group consisting of a switching element of an active-type liquidcrystal display device, a peripheral driver circuit of said active-typeliquid crystal display device, an image sensor and an integratedcircuit.
 87. A method for manufacturing a semiconductor devicecomprising the steps of:forming a semiconductor film comprising siliconover a substrate having an insulating surface; forming a film comprisinga material in contact with at least a portion of said semiconductorfilm, wherein said material promotes crystallization of saidsemiconductor film; crystallizing said semiconductor film by heatingwith said film comprising said material; patterning said crystallizedsemiconductor film in order to form at least one semiconductor island;oxidizing a surface of said crystallized semiconductor film in anoxidizing gas containing chlorine by irradiating said crystallizedsemiconductor film with light, said light heating said crystallizedsemiconductor film selectively; forming an insulating film comprising asilicon oxide film adjacent to said semiconductor island by CVD; forminga gate electrode adjacent to said semiconductor island with saidinsulating film interposed therebetween; doping one conductivity typeimpurity ions into said semiconductor island; and lamp annealing saidsemiconductor island after said doping.
 88. A method according to claim87 wherein said light has a wavelength of 0.5 μm to 4 μm.
 89. A methodof claim 87 wherein said material comprises one metal element selectedfrom the group consisting of Fe, Co, Ni, Ru, Rh, Pd, Os, Ir, Pt, Sc, Ti,V, Cr, Mn, Cu, Zn, Au and Ag.
 90. A method according to claim 87 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 110 to 200 cm² /Vs and has an S valueof from 0.2 to 0.5 V/digit.
 91. A method according to claim 87 whereinsaid semiconductor film, said insulating film and said gate electrodeconstitute at least one thin film transistor, wherein said thin filmtransistor has a mobility of from 50 to 120 cm² /Vs and has an S valueof from 0.4 to 0.6 V/digit.
 92. A method according to claim 87 whereinsaid semiconductor device is used in at least one article selected fromthe group consisting of a switching element of an active-type liquidcrystal display device, a peripheral driver circuit of said active-typeliquid crystal display device, an image sensor and an integratedcircuit.